메뉴 건너뛰기




Volumn 230, Issue 1-4, 2004, Pages 158-162

Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra

Author keywords

Ambipolar diffusion; Fe implantation InP; Time resolved reflection; Transient photoluminescence

Indexed keywords

AGGLOMERATION; ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; ION IMPLANTATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; REFLECTION;

EID: 2542492469     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.02.024     Document Type: Article
Times cited : (2)

References (19)
  • 8
    • 0017438776 scopus 로고
    • Kash K., Shah J. Appl. Phys. Lett. 45:1984;401 Mettler K. Appl. Phys. 12:1977;75.
    • (1977) Appl. Phys. , vol.12 , pp. 75
    • Mettler, K.1
  • 19
    • 0002372939 scopus 로고
    • S. Pantelides (Ed.), Gordon & Breach, New York
    • S.G. Bishop, in: S. Pantelides (Ed.), Deep Centers in Semiconductors, Gordon & Breach, New York, 1986, p. 541.
    • (1986) Deep Centers in Semiconductors , pp. 541
    • Bishop, S.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.