Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1-x/InP (x ≤ 0.35) strained-multiple-quantum wells

Solid State Communications

Volumn 105, Issue 6, 1998, Pages 393-397

  Zhao, Y G ^a,b   Qin, Y D ^a,b   Huang, X L ^a,b   Wang, J J ^a,b   Zou, Y H ^a,b   Masut, R A ^c   Beaudoin, M ^c  

^a PEKING UNIVERSITY   (China)

^b Natl Lab Superlattices M   (China)

^c ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

A. quantum wells; D. electronic transport; E. time resolved optical spectroscopies

Indexed keywords

DIFFUSION; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SPECTROSCOPY; SUPERLATTICES;

DIFFERENTIAL REFLECTION DYNAMICS; PHOTOEXCITED CARRIER DIFFUSION DEPENDENCE; TIME RESOLVED OPTICAL SPECTROSCOPIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031994931     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10144-2     Document Type: Article

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