Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 5, 2004, Pages 204-206

  Ohsato, Kousuke ^a   Yoshimasu, Toshihiko ^a,b  

^a SHARP CORPORATION   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

CMOS; L band personal communications; MMIC amplifier; SOI

Indexed keywords

AMPLIFIERS (ELECTRONIC); COSTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; PERSONAL COMMUNICATION SYSTEMS; SILICON ON INSULATOR TECHNOLOGY;

DRAIN CURRENTS; DRAIN VOLTAGE; FREQUENCY BAND; SPIRAL INDUCTORS;

CMOS INTEGRATED CIRCUITS;

EID: 2542482839     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.827911     Document Type: Article

References (6)

1. N. Suematsu, M. Ono, S. Kudo, Y. Iyama, and O. Ishida, "L-band internally matched Si-MMIC front-end," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2375-2378, Dec. 1996.
2. C. S. Kim, M. Park, C.-H. Kim, Y. C. Hyeon, H. K. Yu, K. Lee, and K. S. Nam, "A fully integrated 1.9-GHz CMOS low-noise amplifier," IEEE Microwave Guided Wave Lett., vol. 5, pp. 293-295, Aug. 1998.
3. V. Aparin, E. Zeisel, and P. Gazzerro, "Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications," in IEEE MTT-S Symp. Dig., 2002, pp. 129-132.
4. A. O. Adan, T. Naka, S. Kaneko, D. Urabe, K. Higashi, Y. Fukushima, S. Takamatsu, S. Hideshima, and A. Kagisawa, "An advanced shallow SIMOX/CMOS technology for high performance portable systems," IEICE Trans. Electron., pp. 407-416, Mar. 1997.
5. H. Komurasaki et al., "A sub 1-V SOI CMOS low noise amplifier for L-band applications," in IEEE RF-IC Symp. Dig., 1998, pp. 153-156.
6. R. Lehmann and D. Heston, "X-band monolithic series feedback LNA," IEEE Trans Microwave Theory Tech., vol. 33, pp. 1560-1566, Dec. 1985.