Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 129-132

  Aparin, Vladimir ^a   Zeisel, Eric ^a   Gazzerro, Pete ^a  

^a QUALCOMM INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CODE DIVISION MULTIPLE ACCESS; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; FREQUENCIES; MIXER CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS;

LOW NOISE AMPLIFIERS (LNA);

AMPLIFIERS (ELECTRONIC);

EID: 0036313329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. "Dual-band/tri-mode receiver IC for N- and W-CDMA systems using 6"-PHEMT technology
2. Silicon UTSi CMOS RFIC for CDMA wireless communications systems
3. A +18dBm IIP3 LNA in 0.35um CMOS
4. Effect of out-of-band terminations on intermodulation distortion in common-emitter circuits
5. High-frequency analysis of linearity improvement technique of common-emitter transconductance stage using a low-frequency trap network
6. IP3 boost circuitry for highly linear CDMA low noise amplifiers (LNA)
7. Highly integrated tri-band/quad-mode SiGe BiCMOS RF-to-baseband receiver for wireless CDMA/WCDMA/AMPS applications with GPS capability
8. Cross modulation distortion in CDMA receivers
9. Enhanced wireless circuit performance with SiGe technology