Full chip model based correction of flare-induced linewidth variation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 2, 2005, Pages 1209-1219

  Word, James ^a   Belledent, Jerome ^b   Trouiller, Yorick ^c   Granik, Yuri ^a   Toublan, Olivier ^a   Maurer, Wilhelm ^d  

^a MENTOR GRAPHICS CORPORATION   (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

^c STMICROELECTRONICS   (France)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Density; Flare; Long Range; Model Based; OPC; Photolithography

Indexed keywords

DENSITY; FLARE; LONG RANGE; MODEL BASED; OPTICAL PROXIMITY CORRECTION (OPC);

COMPUTATION THEORY; CONVOLUTION; LIGHT SCATTERING; MATHEMATICAL MODELS; OPTICAL DESIGN; OPTICAL SYSTEMS;

PHOTOLITHOGRAPHY;

EID: 25144500495     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.601182     Document Type: Conference Paper

References (6)

1. Anatoly Bourov et. al. "Impact of Flare on CD Variation for 248nm and 193nm Lithography Systems," SPIE Vol. 4346 (2001), pp. 1388-1393.
2. Emanuelle Luce et. al. "Flare Impact on the Intrafield CD Control for sub-0.25um Patterning," Vol. 3679 (1999), pp. 368-381.
3. Hiroki Futatsuya et. al. "Model-based OPC/DRC Considering Local Flare Effects," SPIE Vol. 5377 (2004), pp. 451-458.
4. Teruyoshi Yao et. al. "Local Flare Effects and Correction in ArF Lithography," Symposium on VLSI Technology Digest of Technical Papers, (2003),
5. J.P. Kirk "Scattered Light in Photolithographic Lenses," SPIE Vol. 2197 (1994), pp. 566-572.
6. Chris A. Mack "Measuring and Modeling Flare in Optical Lithography," SPIE Vol. 5040 (2003), pp. 151-161.