On the wafer/pad friction of chemical-mechanical planarization (CMP) processes - Part II: Experiments and applications

IEEE Transactions on Semiconductor Manufacturing

Volumn 18, Issue 3, 2005, Pages 371-383

  Yi, Jingang ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

Chemical mechanical planarization (CMP); Friction; Process modeling and monitoring; Shallow trench isolation (STI)

Indexed keywords

MATHEMATICAL MODELS; PARAMETER ESTIMATION; POLISHING; REAL TIME SYSTEMS; ROLLERS (MACHINE COMPONENTS); TORQUE;

CHEMICAL-MECHANICAL PLANARIZATION (CMP); FRICTION MODELING; PROCESS MODELING AND MONITORING; SHALLOW TRENCH ISOLATION (STI);

FRICTION;

EID: 25144495113     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2005.852100     Document Type: Article

References (5)

1. J. Yi, "On the wafer/pad friction of chemical-mechanical planarization (CMP) processes - Part I: Modeling and analysis," IEEE Trans. Semicond. Manuf., vol. 18, no. 3, pp. 359-370, Aug. 2005.
2. A. K. Sikder, F. Giglio, J. Wood, A. Kumar, and M. Anthony, "Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process," J. Electron. Mater., vol. 30, no. 12, pp. 1520-1526, 2001.
3. Y. Homma, K. Fukushima, S. Kondo, and N. Sakuma, "Effects of mechanical parameters on CMP characteristics analyzed by two-dimensional frictional-force measurement," J. Electrochem. Soc., vol. 150, no. 12, pp. G751-G757, 2003.
4. T. Dyer and J. Schlueter, "Characterizing CMP pad conditioning using diamond abrasives," MICRO, Jan. 2002.
5. B. Lee, "Modeling of chemical mechanical polishing for shallow trench isolation," Ph.D. dissertation, Dept. Elect. Eng. Comp. Sci., Massachusetts Inst. Technol., Cambridge, 2002.