Memory in quantum-dot photoluminescence blinking

New Journal of Physics

Volumn 7, Issue , 2005, Pages

  Stefani, Fernando D ^a   Zhong, Xinhua ^b   Knoll, Wolfgang ^a   Han, Mingyong ^b   Kreiter, Maximilian ^a  

^a MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION INTENSITY; LUMINESCENCE BLINKING; RESIDUAL MEMORY;

DATA ACQUISITION; PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 25144480059     PISSN: 13672630     EISSN: 13672630     Source Type: Journal    
DOI: 10.1088/1367-2630/7/1/197     Document Type: Article

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