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Volumn 5755, Issue , 2005, Pages 126-137
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Full-field feature profile models in process control
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Author keywords
Aberration; BARC; BCD; Duty Cycle; K1; Lens; Lithography; Metrology; Model; Perturbation; Process control; Process window; Profile; Resist; Scanner; Scatterometry; SEM; Semiconductor; Side Wall Angle; Slit; SWA; Wafer; Weir PW
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Indexed keywords
LENS;
MODEL;
PERTURBATION;
PROFILE;
SCANNER;
SCATTEROMETRY;
SEMICONDUCTOR;
SIDE-WALL-ANGLE;
SWA;
WAFER;
ABERRATIONS;
ELECTROMAGNETIC WAVE SCATTERING;
MEASUREMENT ERRORS;
PERTURBATION TECHNIQUES;
PHOTOLITHOGRAPHY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR MATERIALS;
PROCESS CONTROL;
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EID: 25144477832
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.600240 Document Type: Conference Paper |
Times cited : (4)
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References (7)
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