X-ray structure characterization of barriers for Cu metallization

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1765-1770

  Mattern, N ^a   Hecker, M ^a   Fischer, D ^b   Wenzel, C ^b   Schell, N ^c   Matz, W ^c   Engelmann, H ^d   Zschech, E ^d  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010400678     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00112-8     Document Type: Article

References (6)

1. T. Nogami et. al., "Graded Ta/TaN/Ta barrier for copper interconnects for high electromigration resistance", in Advanced Metallization Conference Proc., Oct. 1998, pp. 120-121.
2. G.S. Chen, P.Y. Lee S.T. Chen, "Phase-Formation Behavior and Diffusion Barrier Property of Reactively Sputtered Tantalum-Based Thin-Films Used in Semiconductor Metallization" Thin Solid Films 353 (1999), pp, 264-273. 353 (1999), pp, 264-273.
3. G.S. Chen, P.Y. Lee S.T. Chen, "Phase-Formation Behavior and Diffusion Barrier Property of Reactively Sputtered Tantalum-Based Thin-Films Used in Semiconductor Metallization" Thin Solid Films 353 (1999), pp, 264-273. 353 (1999), pp, 264-273.
4. M. Stavrev, D. Fischer, C. Wenzel, K. Drescher, N. Mattern, "Crystallographic and morphological characterization of reactively sputtered Ta,Ta-N and Ta-N-O films" Thin Solid Films 307 (1997), pp.79-88.
5. H.P. Klug, PL.E. Alexander, X-Ray Diffraction Procedures, New York, John Wiley & Sons, Inc. (1954)
6. R.W. James, The Optical Principles of the Diffraction of X-Rays, Ox Bow Press (1962)