Mechanical stress in ALD-Al 2 O 3 films

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 200-204

  Krautheim, Gunter ^a   Hecht, Thomas ^b   Jakschik, Stefan ^b   Schröder, Uwe ^b   Zahn, Wieland ^a  

^a UNIVERSITY OF APPLIED SCIENCES ZWICKAU   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Atomic layer deposition; Dielectric thin films; Phase transition; Stress relaxation; Temperature dependence of mechanical stress

Indexed keywords

CRYSTALLINE MATERIALS; DIFFUSION; PHASE TRANSITIONS; STRESS ANALYSIS; STRESS RELAXATION; THERMAL CYCLING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC-LAYER DEPOSITION; DIELECTRIC THIN FILMS; X-RAY REFLECTANCE (XRR);

ALUMINUM COMPOUNDS;

EID: 24644480164     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.118     Document Type: Conference Paper

References (4)

1. W.S. Yang Surf. Coat. Technol. 131 2000 79
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3. V.V. Afanas'ev Appl. Phys. Lett. 81 2002 1678
4. ULLMANNs Enzyklopädie der technischen Chemie, Bd.7, 4.Aufl.,Verlag Chemie, Weinheim, 1974, http://xoomer.virgilio.it/lpagnoli/Boehmit.html.