Characterization of e-beam induced resist slimming using etched feature measurements

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5752, Issue III, 2005, Pages 1300-1306

  Yates, Colin ^a   Sapp, Galen ^b   Knutrud, Paul ^b  

^a AGERE SYSTEMS   (United States)

^b Soluris Inc   (United States)

Author keywords

193 nm resist; CD SEM; Low voltage; Metrology; Resist slimming

Indexed keywords

ELECTRIC POTENTIAL; ETCHING; IMAGE ANALYSIS; LITHOGRAPHY; MEASUREMENTS; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

193 NM RESIST; CD-SEM; LOW VOLTAGE; RESIST SLIMMING;

ELECTRON BEAMS;

EID: 24644479642     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.601155     Document Type: Conference Paper

References (3)

1. Cao GX, Wheeler NJ, Wong A: 193 nm resist shrinkage carryover effect to a postetch layer due to CD-SEM measurement, Proceedings of the SPIE 5375, 657-664 (2004)
2. Sullivan N, et. al.: Electron Beam Metrology of 193-nm resists at ultralow voltage, Proceedings of the SPIE 5038, 483-492 (2003)
3. Su B, et. al.: Analyzing and Characterizing 193 nm resist shrinkage, Solid State Technology, May 2001 p 57.