Analyzing and characterizing 193 nm resist shrinkage

Solid State Technology

Volumn 44, Issue 5, 2001, Pages

  Su, Bo ^a   Eytan, Guy ^a,c   Padmanaban, Munirathna ^b   Romano, Andrew ^b  

^a APPLIED MATERIALS INC   (United States)

^b CLARIANT CORPORATION   (United States)

^c PDC Group at Applied Materials

Author keywords

[No Author keywords available]

Indexed keywords

RESIST SHRINKAGE;

ANTIREFLECTION COATINGS; CROSSLINKING; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; SCANNING ELECTRON MICROSCOPY; SHRINKAGE; SILICON WAFERS; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 0002449008     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (6)

1. M. Neisser, et al., "Mechanism studies of SEM measurement effects on 193nm photoresists and the development of improved linewidth measurement methods," Proceedings of Interface 2000, pp. 43-52.
2. L. Pain, et al., "Study of 193nm resist behavior under SEM inspection: How to reduce linewidth shrinkage effect," Proc. of Interface 2000, pp. 233-248.
3. B. Su, A. Romana, "Study on 193nm photoresist shrinkage after electron beam exposure," Proceedings of Interface 2000, pp. 249-264.
4. N.R. Bantu, et al., "Low shrinkage DUV resist," Proc. of Interface 1998, p. 229.
5. M.F. Ross, et al., "Characterization of electron beam stabilization of deep-UV resist," Proceedings of Interface 1997, p. 119.
6. B. Su, et al., "Sidewall angle measurements using CD-SEM," Proc. of Advanced Semiconductor Manufacturing Conference (ASMC), pp., 259-261, 1998.