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Journal of Crystal Growth

Volumn 283, Issue 3-4, 2005, Pages 309-314

Growth and transport properties of Sb2-xV xTe3 thin films on sapphire substrates

(3) Chien, Yi Jiunn a Zhou, Zhenhua a Uher, Ctirad a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B1. Sb2 xVxTe3; B1. Sb2Te3; B2. Semiconducting ternary compound

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GROWTH (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SUBSTRATES; TERNARY SYSTEMS; THIN FILMS; TRANSPORT PROPERTIES; VANADIUM;

SAPPHIRE SUBSTRATES; SB2-XVXTE3; SB2TE3; SEMICONDUCTING TERNARY COMPOUNDS;

SAPPHIRE;

EID: 24644474707 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.06.046 Document Type: Article

Times cited : (22)

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