Thin film based thermoelectric energy conversion systems

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2002-January, Issue , 2002, Pages 523-527

  Nurnus, J ^a   Bottner H ^a   Kiinzel, C ^a   Vetter, U ^a   Lambrecht, A ^a   Schumann, J ^b   Volklein F ^c  

^a FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

^b IFW DRESDEN   (Germany)

^c RHEINMAIN UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GERMANIUM; HIGH TEMPERATURE APPLICATIONS; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SILICIDES; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; THICK FILM DEVICES; THICK FILMS; THIN FILM DEVICES; THIN FILMS;

EXPERIMENTAL VERIFICATION; GEOMETRICAL DIMENSIONS; LOW DIMENSIONAL STRUCTURE; LOW-DIMENSIONAL SYSTEMS; MAGNETRON SPUTTER EPITAXY; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC ENERGY; THERMOELECTRIC PROPERTIES;

THERMOELECTRIC ENERGY CONVERSION;

EID: 84949817933     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2002.1190370     Document Type: Conference Paper

References (12)

1. Venkatasubramanian, R. et al., "Thin-film thermoelectric devices with high room-temperature figures of merit". Nature, Vol. 413 (2001), pp. 597-602.
2. Fan, X. et al., "Integrated Cooling for Si-Based Microelectronics", Proc. 20th Int. Conf. Thermoelectrics, Beijing, China, June 2001, pp. 405-408.
3. Koga, T. et al., "Experimental Proof-of-Principle Investigation of enhanced Z5DT in (001) oriented Si/Ge Superlattices" Appl. Phys. Lett., Vol. 77 (2000), pp. 1490-1492.
4. Nurnus, J. et al., "Structural and Thermoelectric Properties of Bi2Te3 Based Layered Structures", 19'th Int. Conf. Thermoelectrics, Cardiff, U.K., August 2000, pp. 236-240.
5. Lambrecht, A. et al., "High Figure of Merit ZT in PbTe and Bi2Te3 Based Superlattice Structures by Thermal Conductivity Reduction", 20th Int. Conf. Thermoelectrics, Beijing, China, June 2001, pp. 335-339.
6. Beyer, H. et al., "PbTe based superlattice structures with high thermoelectric efflcency", Appl. Phys. Lett., Vol. 80, No. 7 (2002), pp. 1216-1218.
7. Kleint, C.A., A. Heinrich, T. Muehl, J. Schumann, and M. Hecker, "Mat. Res. Soc. Symp. Proc. 626, (2000). Z8.18. pp. 1-5.
8. Kleint, C.A. et al., "Strain Symmetrized Silicon/Germanium (111) Superlattices: Structural and Thermoelectric Transport Properties", Proc. 19th Int. Conf. Thermoelectrics, Cardiff (Wales, UK), August 2000, pp. 241-245.
9. Kleint, C.A. et al., "Structure and Thermal Conductivity of Strain Symmetrized Si/Ge Superlattices on Si(111)", Proc. 6th Workshop European Thermoelectric Society (ETS), Freiburg i. Br., Sept. 2001, .
10. Numerical calculations performed with MATLAB 5.3.
11. J. Nurnus et al., "Approaches for PbTe and Bi2Ter based superlattice thin film devices", Proc. 6th Workshop European Thermoelectric Society (ETS), Freiburg i. Br., Sept. 2001.
12. Infrared Systems Developement Cooperation: Black Body Reference Source, Model: IR 560. Temperature range: 50 to 1050°C.