Investigation of ultrathin tantalum based diffusion barrier films using AES and TEM

Applied Surface Science

Volumn 252, Issue 1 SPEC. ISS., 2005, Pages 185-188

  Dittmar, Kornelia ^a   Engelmann, Hans Jürgen ^a   Peikert, M ^b   Wieser, E ^b   Borany, J V ^b  

^a IBM MICROELECTRONICS   (United States)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

AES; Diffusion barrier; Plasma immersion ion implantation; Tantalum nitride; TEM

Indexed keywords

ASPECT RATIO; AUGER ELECTRON SPECTROSCOPY; DIFFUSION; ION IMPLANTATION; PLASMA THEORY; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION BARRIER; PLASMA IMMERSION ION IMPLANTATION; TANTALUM NITRIDE (TAN);

TANTALUM;

EID: 24644453837     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.02.016     Document Type: Conference Paper

References (4)

1. M. Peikert, J.v. Borany, E. Wieser, H. Reuther, K. Dittmar, D. Gehre, Incorporation of nitrogen in thin Ta films using plasma immersion ion implantation, Surf. Coat. Technol., submitted for publication.
2. K. Dittmar Thin Film analysis in microprocessor manufacturing using Auger Electron spectroscopy, ECASIA Surf. Interf. Anal. 3618 2004 837 840
3. D. Watson Surf. Interface Anal. 15 1990 516
4. H.-J. Engelmann Praktische Metallographie 4 2003 163