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Volumn 4691 II, Issue , 2002, Pages 810-821

0.33 k1 ArF lithography for 100 nm DRAM

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL RESISTANCE; COMPUTER SIMULATION; ETCHING; MASKS; SCANNING;

EID: 0036414024     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474631     Document Type: Conference Paper
Times cited : (3)

References (2)
  • 1
    • 25144522920 scopus 로고    scopus 로고
    • A novel approximate model for resist process
    • Chang-Nam Ahn, Hee-Bom Kim et al., "A Novel Approximate Model for Resist Process", SPIE Vol.3334(1998), p752.
    • (1998) SPIE , vol.3334 , pp. 752
    • Ahn, C.-N.1    Kim, H.-B.2
  • 2
    • 0034430579 scopus 로고    scopus 로고
    • Optimization of dipole off-axis illum/nation by 1'st order efficiency method for sub-120 nm node with KrF lithography
    • December 2000
    • Seo-Min Kim, Sang-Jin Kim et al., "Optimization of Dipole Off-Axis Illum/nation by 1'st Order Efficiency Method for Sub-120nm Node with KrF Lithography", Jpn. J. Appl. Phys. Vol.39(2000), p6777, Part1, No. 12B, December 2000.
    • (2000) Jpn. J. Appl. Phys. , vol.39 , Issue.12 PART 1 12B , pp. 6777
    • Kim, S.-M.1    Kim, S.-J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.