VSWR-protected silicon bipolar power amplifier with smooth power control slope

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 47, Issue , 2004, Pages

  Scuderi, Angelo ^a   Scuderi, Antonino ^b   Carrara, Francesco ^a   Palmisano, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED LOOP POWER CONTROL; LARGE SIGNAL CONDITIONS; LOAD IMPEDANCE MISMATCH; POWER ADDED EFFICIENCY (PAE);

CAPACITANCE; CELLULAR RADIO SYSTEMS; CLOSED LOOP CONTROL SYSTEMS; ELECTRIC LOADS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; MICROPROCESSOR CHIPS; POWER AMPLIFIERS; RESISTORS; SEMICONDUCTING GALLIUM ARSENIDE;

POWER CONTROL;

EID: 2442678906     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. W. Simbürger et al., "A Monolithic Transformer Coupled 5-W Silicon Power Amplifier with 59% PAE at 0.9 GHz," IEEE J. Solid-State Circuits, vol. 34, no. 12, pp. 1881-1892, Dec. 1999.
2. F. Carrara et al., "A 1.8-GHz High-Efficiency 34-dBm Silicon Bipolar Power Amplifier," IEEE Trans. Microwave Theory Tech., vol. 50, pp. 2963-2970, Dec. 2002.
3. K. Yamamoto et al., "A 3.2-V Operation Single-Chip Dual-Band AlGaAs/GaAs HBT MMIC Power Amplifier with Active Feedback Circuit Technique," IEEE J. Solid-State Circuits, vol. 35, no. 8, pp. 1109-1120, Aug. 2000.
4. J. R. King, "High VSWR Mismatch Output Stage," U.S. Patent 6 137 366, Oct. 24, 2000.