Strain and compositional profile determination in ion bombarded heterostructures by the complementary use of RBS/channeling and high resolution X-ray diffraction

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 565-569

  Turos, A ^a,b   Gaca, J ^a   Wojcik, M ^a   Stonert, A ^a,b   Groetzschel, R ^c  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Defect migration; Heterostructures; III V semiconductors; Ion implantation

Indexed keywords

COMPOSITION EFFECTS; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION (HRXRD);

HETEROJUNCTIONS;

EID: 0036568964     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01285-X     Document Type: Conference Paper

References (11)