Influence of doping concentration and ambient temperature on the cross-plane seebeck coefficient of InGaAs/InAlAs superlattices

Materials Research Society Symposium - Proceedings

Volumn 793, Issue , 2003, Pages 59-65

  Zhang, Yan ^a   Vashaee, Daryoosh ^a   Singh, Rajeev ^a   Shakouri, Ali ^a   Zeng, Gehong ^b   Chiu, Yi Jen ^b  

^a University of California Santa Cruz   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEEBECK EFFECT; SENSORS; SUPERLATTICES; THERMAL EFFECTS; THIN FILMS;

DISTRIBUTED BRAGG REFLECTOR LASER (DBR); HETEROSTRUCTURE-INTEGRATED THERMONIC (HIT); THERMOELECTRIC TRANSPORT; WAVELENGTH DIVISION MULTIPLEXING (WDM);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 2442591727     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-793-s2.4     Document Type: Conference Paper

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