AiGaAs superlattice microcoolers

Applied Physics Letters

Volumn 83, Issue 2, 2003, Pages 374-376

  Zhang, Jizhi ^a   Anderson, Neal G ^a   Lau, Kei May ^b  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COOLING; MICROELECTRONICS; OHMIC CONTACTS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY;

MICROCOOLERS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0043270504     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591242     Document Type: Article

References (18)

1. G. D. Mahan and L. M. Woods, Phys. Rev. Lett. 80, 4016 (1998).
2. G. D. Mahan, J. Appl. Phys. 76, 4362 (1994).
3. T. Koga, S. B. Cronin, M. S. Dresselhaus, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. 77, 1490 (2000).
4. G. D. Mahan, J. O. Sofo, and M. Bartkowiak, J. Appl. Phys. 83, 4683 (1998).
5. A. Shakouri and J. E. Bowers, Appl. Phys. Lett. 71, 1234 (1997).
6. R. Venkatasubramanian, E. Silvola, T. Colpitts, and B. O'Quinn, Nature (London) 413, 597 (2001).
7. T. Koga, X. Sun, S. B. Cronin, and M. S. Dresselhaus, Appl. Phys. Lett. 73, 2950 (1998).
8. L. D. Hicks and M. S. Dresselhaus, Phys. Rev. B 47, 12727 (1993).
9. S. M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997).
10. X. Fan, G. Zeng, C. LaBounty, J. E. Bowers, E. Croke, C. C. Ahn, S. Huxtable, A. Majumdar, and A. Shakouri, Appl. Phys. Lett. 78, 1580 (2001).
11. A. Shakouri, C. LaBounty, J. Piprek, P. Abraham, and J. E. Bowers, Appl. Phys. Lett. 74, 88 (1999).
12. C. LaBounty, A. Shakouri, and J. E. Bowers, J. Appl. Phys. 89, 4059 (2001).
13. H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, and C. Sirtori, Appl. Phys. Lett. 78, 3529 (2001).
14. N. K. Das and H. L. Bertoni, Directions for the Next Generation of MMIC Devices and Systems (Plenum, New York, 1997).
15. E. K. Stefanakos, A. Abul-Fadl, and M. D. Workman, J. Appl. Phys. 46, 3002 (1975).
16. P. R. Berger, N. K. Dutta, K. D. Choquette, G. Hasnain, and N. Chand, Appl. Phys. Lett. 59, 117 (1991).
17. S. Adachi, Properties of Aluminum Gallium Arsenide (INSPEC, UK, 1993).
18. E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, UK, 1993).