Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl2/Ar inductively coupled plasma

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 485-489

  Kim, Gwan Ha ^a   Kim, Kyoung Tae ^a   Kim, Dong Pyo ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Etching; ICP; OES; PST; XPS

Indexed keywords

ARGON; CHLORINE; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ETCHING; INDUCTIVELY COUPLED PLASMA; MIXTURES; PERMITTIVITY; STRONTIUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

(PB,SR)TIO3; DIRECT CURRENT BIAS VOLTAGE; PST; RADIO FREQUENCY;

THIN FILMS;

EID: 2442568513     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.018     Document Type: Article

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