Electrical characteristics of (Pb,Sr)TiO3 thin films for ultra-large-scale-integrated dynamic random access memory capacitors prepared by liquid-source misted chemical deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 275-280

  Chung, H J ^a   Woo, S I ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITORS; CRYSTALLIZATION; DEPOSITION; DIELECTRIC LOSSES; DYNAMIC RANDOM ACCESS STORAGE; HEAT TREATMENT; PERMITTIVITY; SEMICONDUCTING LEAD COMPOUNDS; SILICON WAFERS; THIN FILMS; WAVELENGTH DISPERSIVE SPECTROSCOPY;

DYNAMIC RANDOM ACCESS MEMORY (DRAM) CAPACITORS; LEAD STRONTIUM TITANIUM;

SEMICONDUCTING FILMS;

EID: 0035082228     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1333082     Document Type: Article

References (17)

1. P. K. Larsen, G. J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
2. O. Auciello, A. R. Krauss, J. Im, D. M. Gruen, E. A. Irene, R. P. H. Chang, and G. E. McGuire, Appl. Phys. Lett. 69, 2671 (1996).
3. T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono, Jpn. J. Appl. Phys., Part 1 35, 4880 (1996).
4. I. Kanno, S. Hayashi, R. Takayama, H. Sakakima, and T. Hirao, Jpn. J. Appl. Phys., Part 1 34, 5211 (1995).
5. G. M. Rao and S. B. Krupanidhi, Appl. Phys. Lett. 64, 1591 (1994).
6. H. Miki and Y. Ohji, Jpn. J. Appl. Phys., Part 1 33, 5143 (1994).
7. A. Li, C. Ge, P. Lu, D. Wu, S. Xing, and N. Ming, Appl. Phys. Lett. 70, 1616 (1997).
8. C. A.-P. de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
9. M. Huffman, Integr. Ferroelectr. 10, 39 (1995).
10. H. J. Chung, J. H. Kim, W. S. Moon, S. B. Park, C. S. Hwang, M. Y. Lee, and S. I. Woo, Integr. Ferroelectr. 12, 185 (1996).
11. A. Yamnashi, K. Tanaka, T. Nagatomo, and O. Omoto, Jpn. J. Appl. Phys., Part 1 32, 4179 (1993).
12. H. Yamaguchi, S. Matsubara, and Y. Miyasaka, Jpn. J. Appl. Phys., Part 1 30, 2197 (1991).
13. A. B. Catalan, J. V. Mantese A. L. Micheli, and N. W. Schubring, J. Appl. Phys. 76, 2541 (1994).
14. A. Nazeri, M. Kahn, and T. Kidd, J. Mater. Sci. Lett. 14, 1085 (1995).
15. H. Kawano, K. Morri, and Y. Nakayama, J. Appl. Phys. 73, 5141 (1993).
16. V. Chikarmane, J. Y. Kim, C. Sudhama, J. Lee, A. Tasch, and S. Novak, J. Electron. Mater. 21, 503 (1992).
17. T. Tamura, K. Takai, H. Noshiro, M. Kimura, S. Otani, and M. Yamada, Jpn. J. Appl. Phys., Part 2 33, L1697 (1994).