Substrate noise-coupling characterization and efficient suppression in CMOS technology

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 817-819

  Yeh, Wen Kuan ^a   Chen, Shuo Mao ^b   Fang, Yean Kuen ^b  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Deep n well (DNW); Guard ring (GR); Radio frequency (RF); Substrate noise coupling

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE; SUBSTRATES;

DEEP N-WELL; GURAD RING; NOISE-COUPLING CHARACTERIZATION; SUBSTRATE NOISE COUPLING;

MOSFET DEVICES;

EID: 2442530854     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825814     Document Type: Article

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