Representation of the SiGe HBT's thermal impedance by linear and recursive networks

Microelectronics Reliability

Volumn 44, Issue 6, 2004, Pages 945-950

  Mnif, Hassène ^a   Zimmer, Thomas ^a   Battaglia, Jean Luc ^b   Fregonese, Sébastien ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b ARTS ET MÉTIERS PARISTECH   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; HEAT TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS;

CIRCUIT SIMULATORS; RECURSIVE NETWORKS; THERMAL IMPEDANCE; THERMAL SPREADING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2442517536     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.004     Document Type: Article

References (7)

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3. Walkey DJ, Smy TJ, Marchesan D, Tran H, Reimer C, Kleckner TC, et al. Extraction and modelling of thermal behavior in trench isolated bipolar structures. In: Proceedings of the IEEE BCTM, MN, USA; 1999. p. 97-100.
4. Mnif H, Zimmer T, Battaglia JL, Ardouin B. Modeling the self-heating effect in SiGe HBTs. In: Proceedings of the IEEE BCTM, MN, USA; 2002. pp. 96-9.
5. Wall H.S. Analytical theory of continued fractions. 1948;Van Nostrand, New York.
6. Martinet B, Romagna F, Kermarrec O, Campidelli Y, Saguin F, Baudry H, et al. An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter. In: Proceedings of the IEEE BCTM, MN, USA; 2002. p. 147-50.
7. Mnif H, Zimmer T, Battaglia JL, Ardouin B, Berger D, Celi D. A new approach for modeling the thermal behavior of bipolar transistors. In: IEEE ICCDCS Proceedings, Aruba; 2002. p. D024-1/D024-5.