Low-operating-voltage integrated silicon light-emitting devices

IEEE Journal of Quantum Electronics

Volumn 40, Issue 5, 2004, Pages 557-563

  Aharoni, Herzl ^a,b   Du Plessis, Monuko ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

Field emission; Light emitting devices; Silicon

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TRANSITIONS; LSI CIRCUITS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

FIELD EMISSION; QUANTUM TRANSITIONS; REVERSE BIAS; REVERSE OPERATING CURRENT;

LIGHT EMITTING DIODES;

EID: 2442505771     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.826445     Document Type: Article

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