Silicon transconductance light emitting device (TRANSLED)

Sensors and Actuators, A: Physical

Volumn 80, Issue 3, 2000, Pages 242-248

  Du Plessis, Monuko ^a   Aharoni, Herzl ^a   Snyman, Lukas W ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EMISSION; MOS DEVICES; SILICON; TRANSCONDUCTANCE;

LIGHT EMITTING DEVICE; LIGHT INTENSITY; LIGHT PATTERNS;

DISPLAY DEVICES;

EID: 0033886933     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(99)00316-7     Document Type: Article

References (24)

1. Newman R. Visible light from a silicon p-n junction. Phys. Rev. 100:1955;700-703.
2. Chynoweth A.G., McKay K.G. Photon emission from avalanche breakdown in silicon. Phys. Rev. 102:1956;369-376.
3. T. Figielski, A. Torun, On the origin of light emitted from reverse biased p-n junctions, Proc. 6th Intl. Conf. Physics of Semiconductors, Exeter, UK, 1962, pp. 863-868.
4. Shewcun J., Wei L.Y. Mechanism for reverse-biased breakdown radiation in p-n junctions. Solid-State Electron. 8:1965;485-493.
5. Bude J., Sano N., Yoshii A. Hot-carrier luminescence in Si. Phys. Rev. B. 45:1992;5848-5856.
6. Lacaita A.L., Zappa F., Bigliardi S., Manfredi M. On the Bremsstrahlung origin of hot-carrier-induced photons in silicon devices. IEEE Trans. Electron Devices. ED 40:1993;577-582.
7. Carbone L., Brunetti R., Jacoboni C., Lacaita A., Fischetti M. Polarization analysis of hot-carrier light emission in silicon. Semicond. Sci. Technol. 9:1994;674-676.
8. +p diodes. J. Appl. Phys. 84:1998;2953-2959.
9. van Drieënhuizen B.P., Wolffenbuttel R.F. Optocoupler based on the avalanche light emission in silicon. Sens. Actuators, A. 31:1992;229-240.
10. Kramer J., Seitz P., Baltes H. Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs). Sens. Actuators, A. 34:1992;21-30.
11. Kramer J., Seitz P., Steigmeier E.F., Auderset H., Delley B., Baltes H. Light emitting devices in industrial CMOS technology. Sens. Actuators, A. 37-38:1993;527-533.
12. L.W. Snyman, H. Aharoni, M. du Plessis, Increased efficiency of silicon CMOS light emitting diodes, Proc. ISBLLED'96, International Symp. on Blue Laser and Light Emitting Diodes, Chiba Univ., Chiba, Japan, 5-7 March 1996, pp. 562-565.
13. L.W. Snyman, H. Aharoni, M. du Plessis, Higher efficiency Si LEDs with standard CMOS technology, Proc. EDMO'97, 5th IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, King's College, London, UK, 24-25 November 1997, pp. 340-345.
14. L.W. Snyman, A. Biber, H. Aharoni, M. du Plessis, B. D. Patterson, P. Seitz, Practical Si LED's with standard CMOS technology, Proc. IEEE Southeastcon '98 Conference, Orlando, FL, USA, 24-26 April 1998, pp. 344-347.
15. Snyman L.W., Aharoni H., du Plessis M., Gouws R.B.J. Increased efficiency of silicon light-emitting diodes in a standard 1.2-μm silicon complementary metal oxide semiconductor technology. Opt. Eng. 37:1998;2133-2141.
16. Hirschman K.D., Tsybeskov L., Duttagupta S.P., Fauchet P.M. Silicon-based visible light emitting devices integrated into micro-electronic circuits. Nature. 384:1996;338-341.
17. D.J. Lockwood (Ed.), Light Emission in Silicon: From Physics to Devices, Vol. 49, Semiconductor and Semimetals, Academic Press, 1998.
18. Aharoni H., du Plessis M. The spatial distribution of light from silicon LED's. Sens. Actuators, A. 57:1996;233-237.
19. Austria Mikro Systeme International, 0.8 um BiCMOS Design Rules and 0.8 um BiCMOS Process Parameters, Documents 9931016 Rev.C and 9933008 Rev. A, Unterpremstätten, Austria, 1997.
20. Sze S.M., Gibbons G. Effect of junction curvature on breakdown voltages in semiconductors. Solid-State Electron. 9:1966;831-840.
21. A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York, 1967, Chap. 10, pp. 311-315.
22. B. El-Kareh, R.J. Bombard, Introduction to VLSI Silicon Devices: Physics, Technology and Characterization, Chap. 5, Kluwer Academic Publishers, Boston, 1986, pp. 396-401.
23. M. du Plessis, H. Aharoni, L.W. Snyman, Spectral characteristics of Si light emitting diodes in a 0.8 micron BiCMOS technology, Proceedings of The International Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'98, Perth, Australia, 14-16 December 1998, pp. 228-231.
24. +pn CMOS structure, Proc. IEEE Southeastcon '99 Conference, Lexington, KY, USA, 24-28 March 1999, pp. 242-245.