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Volumn 57, Issue 3, 1996, Pages 233-237

The spatial distribution of light from silicon LEDs

Author keywords

Light patterns; Light emitting diodes; Silicon

Indexed keywords

CALCULATIONS; CRYSTALS; CURRENT DENSITY; LIGHT EMISSION; PHOTODIODES; SEMICONDUCTING SILICON;

EID: 0030372987     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80119-7     Document Type: Article
Times cited : (14)

References (11)
  • 1
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    • Newman, R.1
  • 2
    • 0000092841 scopus 로고
    • Photon emission from avalanche breakdown in silicon
    • A.G. Chynoweth and K.G. McKay, Photon emission from avalanche breakdown in silicon, Phys. Rev., 102 (1956) 369-376.
    • (1956) Phys. Rev. , vol.102 , pp. 369-376
    • Chynoweth, A.G.1    McKay, K.G.2
  • 3
    • 0000814025 scopus 로고
    • Theory of optical radiation from breakdown avalanche in germanium
    • P.A. Wolff, Theory of optical radiation from breakdown avalanche in germanium, J. Phys. Chem. Solids, 16 (1960) 184-190.
    • (1960) J. Phys. Chem. Solids , vol.16 , pp. 184-190
    • Wolff, P.A.1
  • 5
    • 0000994970 scopus 로고
    • Mechanism for reversed biased breakdown radiation in p-n junctions
    • J. Shewcun and L. Y. Wei, Mechanism for reversed biased breakdown radiation in p-n junctions, Solid-State Electron., 8 (1965) 485-493.
    • (1965) Solid-state Electron. , vol.8 , pp. 485-493
    • Shewcun, J.1    Wei, L.Y.2
  • 6
    • 0027558842 scopus 로고
    • On the Bremsstrahlung origin of hot-carrier-induced photons in silicon devices
    • A.L. Lacaita, F. Zappa, S. Bigliardi and M. Manfredi, On the Bremsstrahlung origin of hot-carrier-induced photons in silicon devices, IEEE Trans. Electron Devices, ED-40 (1993) 577-582.
    • (1993) IEEE Trans. Electron Devices , vol.ED-40 , pp. 577-582
    • Lacaita, A.L.1    Zappa, F.2    Bigliardi, S.3    Manfredi, M.4
  • 8
    • 0026898298 scopus 로고
    • Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs)
    • J. Kramer, P. Seitz and H. Baltes, Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs), Sensors and Actuators A, 34 (1992) 21-30.
    • (1992) Sensors and Actuators A , vol.34 , pp. 21-30
    • Kramer, J.1    Seitz, P.2    Baltes, H.3
  • 10
    • 20444377612 scopus 로고
    • Avalanche effects in silicon p-n junctions. II. Structurally perfect junctions
    • A. Goetzberger, B. McDonald, R.H. Haitz and R.M. Scarlett, Avalanche effects in silicon p-n junctions. II. Structurally perfect junctions, J. Appl. Physics, 34 (1963) 1591-1600.
    • (1963) J. Appl. Physics , vol.34 , pp. 1591-1600
    • Goetzberger, A.1    McDonald, B.2    Haitz, R.H.3    Scarlett, R.M.4
  • 11
    • 0542399886 scopus 로고
    • Visible light from guardring avalanche silicon photodiodes at different current levels
    • H. Aharoni, J.C. Brummer and M. du Plessis, Visible light from guardring avalanche silicon photodiodes at different current levels, S.A. J. Phys., 16 (1993) 149-152.
    • (1993) S.A. J. Phys. , vol.16 , pp. 149-152
    • Aharoni, H.1    Brummer, J.C.2    Du Plessis, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.