-
1
-
-
36149014038
-
Visible light from a silicon p-n junction
-
R. Newman, Visible light from a silicon p-n junction, Phys. Rev., 100 (1955) 700-703.
-
(1955)
Phys. Rev.
, vol.100
, pp. 700-703
-
-
Newman, R.1
-
2
-
-
0000092841
-
Photon emission from avalanche breakdown in silicon
-
A.G. Chynoweth and K.G. McKay, Photon emission from avalanche breakdown in silicon, Phys. Rev., 102 (1956) 369-376.
-
(1956)
Phys. Rev.
, vol.102
, pp. 369-376
-
-
Chynoweth, A.G.1
McKay, K.G.2
-
3
-
-
0000814025
-
Theory of optical radiation from breakdown avalanche in germanium
-
P.A. Wolff, Theory of optical radiation from breakdown avalanche in germanium, J. Phys. Chem. Solids, 16 (1960) 184-190.
-
(1960)
J. Phys. Chem. Solids
, vol.16
, pp. 184-190
-
-
Wolff, P.A.1
-
4
-
-
0002884801
-
On the origin of light emitted from reverse biased junctions
-
T. Figielski and A. Torun, On the origin of light emitted from reverse biased junctions, Proc. 6th Int. Conf. Physics Semiconductors, Exeter, UK, 1962, pp. 863-868.
-
(1962)
Proc. 6th Int. Conf. Physics Semiconductors, Exeter, UK
, pp. 863-868
-
-
Figielski, T.1
Torun, A.2
-
5
-
-
0000994970
-
Mechanism for reversed biased breakdown radiation in p-n junctions
-
J. Shewcun and L. Y. Wei, Mechanism for reversed biased breakdown radiation in p-n junctions, Solid-State Electron., 8 (1965) 485-493.
-
(1965)
Solid-state Electron.
, vol.8
, pp. 485-493
-
-
Shewcun, J.1
Wei, L.Y.2
-
6
-
-
0027558842
-
On the Bremsstrahlung origin of hot-carrier-induced photons in silicon devices
-
A.L. Lacaita, F. Zappa, S. Bigliardi and M. Manfredi, On the Bremsstrahlung origin of hot-carrier-induced photons in silicon devices, IEEE Trans. Electron Devices, ED-40 (1993) 577-582.
-
(1993)
IEEE Trans. Electron Devices
, vol.ED-40
, pp. 577-582
-
-
Lacaita, A.L.1
Zappa, F.2
Bigliardi, S.3
Manfredi, M.4
-
8
-
-
0026898298
-
Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs)
-
J. Kramer, P. Seitz and H. Baltes, Industrial CMOS technology for the integration of optical metrology systems (photo-ASICs), Sensors and Actuators A, 34 (1992) 21-30.
-
(1992)
Sensors and Actuators A
, vol.34
, pp. 21-30
-
-
Kramer, J.1
Seitz, P.2
Baltes, H.3
-
9
-
-
0542399934
-
Physical model of the light emission processes in silicon CMOS light emitting diodes
-
Kruger National Park, South Africa, 15-17 Nov.
-
L.W. Snyman, H. Aharoni, M. du Plessis, R.B.J. Gouws, L.J. Grobler and D.P.J. Buys, Physical model of the light emission processes in silicon CMOS light emitting diodes, Proc. ISSDT '95, 4th Int. Seminar Simulation of Devices and Technologies, Kruger National Park, South Africa, 15-17 Nov., 1995, pp. 140-143.
-
(1995)
Proc. ISSDT '95, 4th Int. Seminar Simulation of Devices and Technologies
, pp. 140-143
-
-
Snyman, L.W.1
Aharoni, H.2
Du Plessis, M.3
Gouws, R.B.J.4
Grobler, L.J.5
Buys, D.P.J.6
-
10
-
-
20444377612
-
Avalanche effects in silicon p-n junctions. II. Structurally perfect junctions
-
A. Goetzberger, B. McDonald, R.H. Haitz and R.M. Scarlett, Avalanche effects in silicon p-n junctions. II. Structurally perfect junctions, J. Appl. Physics, 34 (1963) 1591-1600.
-
(1963)
J. Appl. Physics
, vol.34
, pp. 1591-1600
-
-
Goetzberger, A.1
McDonald, B.2
Haitz, R.H.3
Scarlett, R.M.4
-
11
-
-
0542399886
-
Visible light from guardring avalanche silicon photodiodes at different current levels
-
H. Aharoni, J.C. Brummer and M. du Plessis, Visible light from guardring avalanche silicon photodiodes at different current levels, S.A. J. Phys., 16 (1993) 149-152.
-
(1993)
S.A. J. Phys.
, vol.16
, pp. 149-152
-
-
Aharoni, H.1
Brummer, J.C.2
Du Plessis, M.3
|