Diode UV detectors using oxide semiconductor thin films deposited by magnetron sputtering

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5274, Issue , 2004, Pages 399-406

  Minami, Tadatsugu ^a   Tanaka, Hideki ^a   Shimakawa, Takahiro ^a   Miyata, Toshihiro ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Magnetron sputtering; Oxide semiconductor; P type semiconductor; Pn junction; Thin films

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICES; SUBSTRATES; ULTRAVIOLET RADIATION;

P-TYPE SEMICONDUCTORS; WIDE BAND GAP;

THIN FILMS;

EID: 2442501289     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.521590     Document Type: Conference Paper

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