Nitrided hafnium silicate film formation by sequential process using a hot wall batch system and its application to MOS transistor

Materials Research Society Symposium - Proceedings

Volumn 786, Issue , 2003, Pages 273-278

  Aoyama, Tomonori ^a   Torii, Kazuyoshi ^a   Mitsuhashi, Riichirou ^a   Maeda, Takeshi ^a   Kamiyama, Satoshi ^a   Horiuchi, Atsushi ^a   Kitajima, Hiroshi ^a   Arikado, Tsunetoshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRODES; HAFNIUM COMPOUNDS; HYDROGEN; MOSFET DEVICES; OXIDATION; PHASE SEPARATION; ULTRATHIN FILMS;

HOT WALL BATCH SYSTEM; INTERFACIAL LAYER (IL) FORMATION; NITRIDED HAFNIUM SILICATE FILM; SEQUENTIAL PROCESSES;

SILICATES;

EID: 2442497383     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: 10.1557/proc-786-e4.9     Document Type: Article

References (5)

1. A.L.P. Rotondaro, M.R. Visokay, J.J. Chambers, A. Shanware, R. Khamankar, H. Bu, R.T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M.J. Bevan, T. Grider, J. McPherson and L. Colombo, Symposium on VLSI Tech., 148 (2002).
2. S. Inumiya, K. Sekine, S. Niwa, A. Kaneko, M. Sato, T. Watanabe, H. Fukui, Y. Kamata, M. Koyama, A. Nishiyama, M. Takayanagi, K. Eguchi and Y. Tsunashima, Symposium on VLSI Tech., 17 (2003).
3. T. Watanabe, M. Takayanagi, R. Iijima, K. Ishimaru, H. Ishiuchi and Y. Tsunashima, Symposium on VLSI Tech., 19 (2003).
4. K. A. Ellis and R.A. Buhrman, J. Electrochem. Soc., 145 (6), 2068 (1998).
5. S. Saito, K. Torii, M. Hiratani and T. Onai, IEEE Electron Device Letters, 23 (6), 348 (2002).