Structure and photoluminescence of nano-ZnO films grown on a Si (100) substrate by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn

Chinese Physics Letters

Volumn 22, Issue 4, 2005, Pages 998-1001

  Lu, Li Xia ^a,b   Tang, Qin Xin ^a   Shao, Chang Lu ^a   Liu, Yi Chun ^a,c  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; II-VI SEMICONDUCTORS; OXYGEN; PHOTOLUMINESCENCE; TEMPERATURE; THERMAL EVAPORATION; X RAY DIFFRACTION; ZINC; ZINC OXIDE; ZINC SULFIDE;

ARGON PLASMAS; LOW TEMPERATURE ANNEALING; LOWS-TEMPERATURES; METALLICS; NANO-ZNO; OXYGEN AMBIENT; OXYGEN PLASMAS; SI (100) SUBSTRATE; ZNO FILMS; ZNO THIN FILM;

METALLIC FILMS;

EID: 24144503663     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/4/061     Document Type: Article

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