Anomalous behaviour of galvanomagnetic effects in very lightly n-type bulk GaAs: possible role of reverse-contrast centres

Physica Status Solidi (A) Applied Research

Volumn 174, Issue 2, 1999, Pages 467-475

  Tuzemen S ^a   Gurbulak B ^a   Yildirim, M ^a   Dogan S ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; MAGNETORESISTANCE; MATHEMATICAL MODELS; TEMPERATURE;

HALL EFFECT MEASUREMENT; LIQUID ENCAPSULATED CZOCHRALSKI PROCESS; REVERSE CONTRAST CENTERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032593468     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199908)174:2<467::AID-PSSA467>3.0.CO;2-#     Document Type: Article

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