Lateral n-i-p junction characterization using laser microscopy

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 406-411

  Muscat, S ^b   Nash, G R ^a   Hall, R S ^a   Smith, S J ^c   Bartlett, C J ^a   Nash, K J ^a   Jefferson, J H ^a   Buckle, L ^a   Emeny, M T ^a   Ashley, T ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF ESSEX   (United Kingdom)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE MODULATION; LASER BEAM EFFECTS; LIGHTING; OPTICAL MICROSCOPY; PHOTOCURRENTS; SEMICONDUCTOR QUANTUM WELLS; SIGNAL DETECTION;

LASER MICROSCOPY; SCANNING LASER MICROSCOPY; SIGNAL AMPLITUDE; TWO-DIMENSIONAL SCANS;

SEMICONDUCTOR JUNCTIONS;

EID: 24144468955     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/014     Document Type: Article

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