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Volumn 44, Issue 6 A, 2005, Pages 3691-3694

Charge carrier transport in neat thin films of phosphorescent iridium complexes

Author keywords

Charge carrier transport; Iridium complexes; OLED; Phosphorescence

Indexed keywords

BIPOLAR TRANSISTORS; IRIDIUM COMPOUNDS; LIGHT EMITTING DIODES; PHOSPHORESCENCE; PHOTOCURRENTS; SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 23944518239     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3691     Document Type: Article
Times cited : (97)

References (19)
  • 11
    • 0000225084 scopus 로고    scopus 로고
    • In the TOF experiments, the penetration depth of the excitation light was ∼0.1μm (i.e., αL ∼ 10). We examined the influence of the penetration depth on the transit-time measurements in dispersive photocurrent transients as observed in Figs. 3 and 4 by computer simulation [T. Nagase, K. Kishimoto and H. Naito: J. Appl. Phys. 86 (1999) 5026], and found that the drift mobility is overestimated by at most 10% under the condition of αL ∼ 10 but the shape of photo-current transients is not affected.
    • (1999) J. Appl. Phys. , vol.86 , pp. 5026
    • Nagase, T.1    Kishimoto, K.2    Naito, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.