Phenomenological description of domain recording in ferroelectric semiconductors by using atomic force microscopy

Physica Status Solidi (B) Basic Research

Volumn 242, Issue 10, 2005, Pages

  Morozovska, Anna N ^a   Eliseev, Eugene A ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23944491414     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200541008     Document Type: Article

References (14)

1. A. Agronin, Y. Rosenwaks, and G. Rosenman, Appl. Phys. Lett. 85, 452 (2004).
2. L. Eng, Ferroelectrics 222, 153 (1999).
3. G. Rosenman, P. Urenski, A. Agronin, A. Arie, and Y. Rosenwaks, Appl. Phys. Lett. 82, 3934 (2003).
4. Y. Rosenwaks, D. Dahan, M. Molotskii, and G. Rosenman, Appl. Phys. Lett. 86, 012909 (2005).
5. P. Paruch, T. Tybell, and J.-M. Triscone, Appl. Phys. Lett. 79, 530 (2001).
6. R. Landauer, J. Appl. Phys. 28, 227 (1957).
7. M. Molotskii, J. Appl. Phys. 93, 6234 (2003).
8. V. M. Fridkin, Ferroelectrics Semiconductors (Consultant Bureau, New-York and London, 1980).
9. G. I. Rosenman, E. I. Boikova, and Yu. L. Chepelev, phys. stat. sol. (a) 69, K173 (1982).
10. A. N. Morozovska and E. A. Eliseev, Physica B 355, 236 (2005).
11. S. V. Kalinin, E. Karapetian, and M. Kachanov, Phys. Rev. B 70, 184101 (2004).
12. A. N. Morozovska and E. A. Eliseev, cond-mat/0505391.
13. R. Waser (Ed.), Polar Oxides (Wiley-VCH, Weinheim, 2005), pp. 189-220.
14. J. Padilla, W. Zhong, and D. Vanderbilt, Phys. Rev. B 53, R5969 (1996).