Ferroelectric domain engineering using atomic force microscopy tip arrays in the domain breakdown regime

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Rosenwaks, Y ^a   Dahan, D ^a   Molotskii, M ^a   Rosenman, G ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; CAMERAS; CHARGE COUPLED DEVICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; FERROELECTRICITY; MICROELECTRONICS; OPTOELECTRONIC DEVICES; RUBIDIUM COMPOUNDS; SCANNING; SILICON; SINGLE CRYSTALS;

ELECTROSTATIC FORCE MICROSCOPY (EFM); FERROELECTRIC CRYSTALS; FERROELECTRIC DOMAIN ENGINEERING; SCANNING PROBE MICROSCOPY;

FERROELECTRIC MATERIALS;

EID: 19744383969     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1847711     Document Type: Article

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