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Volumn 483-485, Issue , 2005, Pages 519-522
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Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: Bistable, negative-U defects
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Author keywords
Carbon interstitials; Dopant activation; Energy levels
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Indexed keywords
CARBON;
DEFECTS;
DOPING (ADDITIVES);
ELECTRON ENERGY LEVELS;
CARBON INTERSTITIALS;
DOPANT ACTIVATION;
COMPLEXATION;
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EID: 23844555947
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.519 Document Type: Conference Paper |
Times cited : (5)
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References (14)
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