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Volumn 483-485, Issue , 2005, Pages 519-522

Theoretical investigations of complexes of p-type dopants and carbon interstitial in SiC: Bistable, negative-U defects

Author keywords

Carbon interstitials; Dopant activation; Energy levels

Indexed keywords

CARBON; DEFECTS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS;

EID: 23844555947     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.519     Document Type: Conference Paper
Times cited : (5)

References (14)
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  • 5
    • 0037871476 scopus 로고    scopus 로고
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    • (2003) Phys. Rev. B , vol.67 , pp. 155203
    • Gali, A.1
  • 7
    • 0346055329 scopus 로고    scopus 로고
    • U. Gerstmann et al., Physica B 340-342, 190 (2003).
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    • Gerstmann, U.1
  • 9
    • 35148850158 scopus 로고    scopus 로고
    • S. A. Reshanov, O. Klettke, and G. Pensl, ICSCRM03, not published, 2003.
    • S. A. Reshanov, O. Klettke, and G. Pensl, ICSCRM03, not published, 2003.
  • 13


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.