K-Band Low-Noise Amplifiers Using 0.18 μm CMOS Technology

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 3, 2004, Pages 106-108

  Yu, Kyung Wan ^a   Lu, Yin Lung ^a   Chang, Da Chiang ^b   Liang, Victor ^b   Chang, M Frank ^a  

^a University of California   (United States)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

0.18 m; CMOS; K band; Low noise amplifier (LNA)

Indexed keywords

BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; MAGNETOELECTRIC EFFECTS; METALLIZING; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; OSCILLATIONS;

K-BAND; LOW-NOISE AMPLIFIER (LNA); SELF-RESONANCE FREQUENCY (SRF); SPIRAL INDUCTORS;

AMPLIFIERS (ELECTRONIC);

EID: 2142705849     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.825175     Document Type: Article

References (5)

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