A highly reliable barrier dielectric for Cu/SiOC interconnects from Trimethylvinylsilane

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 415-419

  Endo, K ^b   Morita, N ^a   Usami, T ^a   Ohto, K ^a   Miyamoto, H ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ETCHING; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; THERMODYNAMIC PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

BARRIER DIELECTRICS; COPPER INTERCONNECTS; ELECTROMIGRATION (EM); SINGLE DAMASCENE TECHNOLOGY;

DIELECTRIC MATERIALS;

EID: 23844538126     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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