Direct plating of Cu on PVD Ru for replacement of Ta(N) diffusion barriers

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 335-340

  Johnston, Steven ^a   Feller, Daniel ^a   Dubin, Valery ^a   Moon, Peter ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4 POINT BEND TESTING; DIFFUSION BARRIERS; DIRECT PLATING; SHEET RESISTANCE;

CHEMICAL MECHANICAL POLISHING; DIFFUSION; PHYSICAL VAPOR DEPOSITION; RUTHENIUM; SPUTTERING; TANTALUM COMPOUNDS;

COPPER;

EID: 23844488076     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. O. Chyan et al., J. Electro. Soc., v150, n5, 2003, p.C347-50
2. M. Lane et al., Appl. Phys. Letters, v83, n12, 2003, p.2330-2332
3. International Technology Roadmap for Semiconductors, 2002 update, Sematech International.
4. C. Ryu et al., IEEE Trans. Elec. Devices, v46, n6, 1999, p. 1113-1120
5. Moffatt's Handbok of Binary Phase Diagrams, edited by J. Westbrook (Genium Publishing Corp, New York, 1984).
6. C. Jan et al, Proceedings of the IEEE 2003 IITC, pp. 15-17
7. D. Gan et al., Advanced Metallization Conference 2003
8. C. Ryu et al., IEEE Trans. Elec. Devices, v46, n6, 1999, p. 1113-1120.