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Volumn 9, Issue 1-2, 2001, Pages 101-108

SiC/DLC composite layers synthesised by the IPD method

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COMPOSITE MATERIALS; CRYSTAL LATTICES; GRAIN SIZE AND SHAPE; HEAT CONDUCTION; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

EID: 23844482558     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/152451102025835     Document Type: Article
Times cited : (4)

References (17)
  • 1
    • 33645256259 scopus 로고    scopus 로고
    • August
    • Diam. Rel. Mater., 6(10): (August 1997).
    • (1997) Diam. Rel. Mater. , vol.6 , Issue.10
  • 2
    • 33645272125 scopus 로고
    • Problems in silicon carbide device development
    • Pennsylvania. (Russian edition) MIR, Moscow
    • P. Shaffer, "Problems in silicon carbide device development," In: Proceedings of the Intern. Conf. on Silicon Carbide. Pennsylvania. 1968. (Russian edition) MIR, Moscow, 1972.
    • (1968) Proceedings of the Intern. Conf. on Silicon Carbide
    • Shaffer, P.1
  • 10
    • 0025724218 scopus 로고
    • K. Zdunek, Vacuum, 42: 469 (1991).
    • (1991) Vacuum , vol.42 , pp. 469
    • Zdunek, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.