Current injection tunable monolithically integrated InGaAs-InAlGaAs asymmetric Mach-Zehnder interferometer using quantum-well intermixing

IEEE Photonics Technology Letters

Volumn 17, Issue 8, 2005, Pages 1677-1679

  Wong, H Y ^a,b   Tan, W K ^a   Bryce, A C ^a   Marsh, J H ^c   Arnold, J M ^a   Krysa, A ^d   Sorel, M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b MULTIMEDIA UNIVERSITY   (Malaysia)

^c Intense Ltd   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Asymetric Mach Zehnder interferometer; Carrier induced electrooptic effect; InGaAs InAlGaAs; Quantum well intermixing (QWI); Wavelength division multiplexing (WDM)

Indexed keywords

ELECTROOPTICAL EFFECTS; OPTICAL DESIGN; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SILICA; WAVELENGTH DIVISION MULTIPLEXING;

ASYMMETRIC MACH-ZEHNDER INTERFEROMETER; CARRIER INDUCED ELECTROOPTIC EFFECT; QUANTUM WELL INTERMIXING (QWI);

INTERFEROMETERS;

EID: 23844481394     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.851964     Document Type: Article

References (13)

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