Standby supply voltage minimization for deep sub-micron SRAM

Microelectronics Journal

Volumn 36, Issue 9, 2005, Pages 789-800

  Qin, Huifang ^a   Cao, Yu ^a   Markovic, Dejan ^a   Vladimirescu, Andrei ^a   Rabaey, Jan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Data retention; DRV; Leakage suppression; SRAM; State preservation; Variation

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SENSORS; STANDBY POWER SERVICE; VOLTAGE CONTROL;

DRV; LEAKAGE SUPPRESSION; STATE PRESERVATION; VARIATION; WIRELESS SENSOR NODES;

STATIC RANDOM ACCESS STORAGE;

EID: 23844470184     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.03.003     Document Type: Conference Paper

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