The influence of defects and postdeposition treatments on the free carrier density in lightly phosphorus-doped large-grained polycrystalline silicon films

Journal of Applied Physics

Volumn 98, Issue 2, 2005, Pages

  Straub, Axel ^a   Inns, Daniel ^a   Terry, Mason L ^a   Gebs, Raphael ^a   Aberle, Armin G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

IMPEDANCE ANALYSIS; POSTDEPOSITION TREATMENTS; POSTHYDROGENATION ANNEALING; SHEET RESISTANCE;

CONCENTRATION (PROCESS); DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HYDROGENATION; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DIODES; SILICON; SILICON SOLAR CELLS; THIN FILMS;

CARRIER CONCENTRATION;

EID: 23844453748     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1977197     Document Type: Article

References (22)

1. Growth, Characterization and Electronic Applications of Si-based Thin Films, edited by, R. B. Bergmann, (Research Signpost, Trivandrum, 2002).
2. A. G. Aberle, A. Straub, P. I. Widenborg, A. B. Sproul, Y. Huang, and P. Campbell, Prog. Photovoltaics 13, 37 (2005).
3. A. Mokhberi, P. B. Griffin, J. D. Plummer, E. Paton, S. McCoy, and K. Elliott, IEEE Trans. Electron Devices 49, 1183 (2002).
4. J. A. Van den Berg, J. Vac. Sci. Technol. B 20, 974 (2002).
5. C. E. Dube and J. I Hanoka, Proceedings of the 31st IEEE Photovoltaic Specialists Conference, Orlando, 2005 (IEEE, New York, 2005), p. 883.
6. S. M. Myers, Rev. Mod. Phys. 64, 559 (1992).
7. S. J Pearton, J. W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors, 1st ed. (Springer, New York, 1992), pp. 38, 76, and 81.
8. T. Makino and H. Nakamura, Appl. Phys. Lett. 35, 551 (1979).
9. S. Hasegawa, K. Kishi, and Y. Kurata, J. Appl. Phys. 55, 542 (1984).
10. T. I Kamins, J. Appl. Phys. 42, 4357 (1971).
11. D. R. Campbell, Appl. Phys. Lett. 36, 604 (1980).
12. C. H. Seager and D. S. Ginley, Appl. Phys. Lett. 34, 337 (1979).
13. P. J. Jennings, J. C. L. Cornish, B. W. Clare, G. T. Hefter, and D. J. Santjojo, Thin Solid Films 310, 156 (1997).
14. A. Straub, R. Gebs, H. Habenicht, S. Trunk, R. A. Bardos, A. B. Sproul, and A. G. Aberle, J. Appl. Phys. 97, 083703 (2005).
15. P. I. Widenborg and A. G. Aberle, J. Cryst. Growth 242, 270 (2002).
16. A. Straub, D. Inns, M. L. Terry, Y. Huang, P. I. Widenborg, and A. G. Aberle, J. Cryst. Growth 280, 385 (2005).
17. R. A. Sinton and A. Cuevas, Proceedings of the 16th European Photovoltaic Solar Energy Conference, Glasgow, 2000 (WIP, Munich, 2000), p. 1152.
18. P. Altermatt and G. A. Heiser, J. Appl. Phys. 91, 4271 (2002).
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 25.
20. C. S. Fuller, J. W. Dietzenberger, N. W. Hannay, and E. Buehler, Phys. Rev. 96, 833 (1954).
21. D. I. Bohne and J. Weber, Phys. Rev. B 47, 4037 (1993).
22. A. Straub, N.-P. Harder, Y. Huang, and A. G. Aberle, J. Cryst. Growth 268, 41 (2004).