CMOS fully compatible microwave detector based on MOSFET operating in resistive regime

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 7, 2005, Pages 445-447

  Ferrari, Giorgio ^a   Fumagalli, Laura ^a   Sampietro, Marco ^a   Prati, Enrico ^b   Fanciulli, Marco ^b  

^a POLITECNICO DI MILANO   (Italy)

^b Istituto Nazionale per la Fisica della Materia Milan   (Italy)

Author keywords

CMOS RF detector; Microwave power detector; MOSFET nonlinearity

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MICROWAVES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

CMOS RF DETECTOR; MICROWAVE POWER DETECTOR; MOSFET NONLINEARITY; SCHOTTKY JUNCTIONS;

SIGNAL DETECTION;

EID: 23844435970     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.851550     Document Type: Article

References (9)

1. Fundamentals of RF and Microwave Power Measurement, Agilent Co., Appl. Note AN64-1C, 2001.
2. B. L. Sharma, Metal-Semiconductor Schottky Barrier Junctions and Their Applications. New York: Plenum, 1984.
3. J. F. Luy, K. M. Strohm, J. Buechier, and P. Russer, "Silicon monolithic millimeter-wave integrated circuits," Proc. Inst. Elect. Eng., vol. 139, pp. 209-216, 1992.
4. M. Abrams, "Dawn of the E-Bomb," IEEE Spectrum, vol. 40, pp. 24-30, Nov. 2003.
5. D. Krewski, C. V. Byus, B. W. Glickman, W. C. Lotz, R. Mandeville, F. S. Prato, and D. F. Weaver, "Recent advances in research on radiofrequency fields and health," J. Toxicol. Env. Health (B), vol. 4, pp. 145-159, 2001.
6. V. Milanovic, M. Gaitan, J. C. Marshall, and M. E. Zaghloul, "CMOS foundry implementation of Schottky diodes for RF detection," IEEE Trans. Electron Devices, vol. 43, no. 12, pp. 2210-2214, Dec. 1996.
7. W. Jeon, T. M. Firestone, J. Rodgers, and J. Melngailis, "Design and fabrication of Schottky diode on chip RF power detector," Solid State Electron., vol. 48, pp. 2089-2093, 2004.
8. F. Carrez and R. Stolle, "Novel low-cost, low-power modulator/demodulator using a single GaAs field effect transistor," Proc. Inst. Elect. Eng., vol. 145, pp. 165-169, 1998.
9. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, p. 428.