Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Hoevers, H F C ^a   Ridder, M L ^a   Germeau, A ^a   Bruijn, M P ^a   De Korte, P A J ^a   Wiegerink, R J ^b  

^a SRON NETHERLANDS INSTITUTE FOR SPACE RESEARCH   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; IONIZING RADIATION; LOW TEMPERATURE OPERATIONS; MEMBRANES; PHASE TRANSITIONS; PHONONS; POLYSILICON; SENSORS; TRANSPORT PROPERTIES;

ELECTROTHERMAL FEEDBACK; RADIATIVE BALLISTIC PHONON TRANSPORT; SILICON NITRIDE MEMBRANES; TRANSITION EDGE SENSORS (TES);

SILICON NITRIDE;

EID: 23744507904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1949269     Document Type: Article

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