Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures

Applied Physics Letters

Volumn 72, Issue 11, 1998, Pages 1305-1307

  Leivo, M M ^a   Pekola, J P ^a  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001220666     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120979     Document Type: Article

References (12)

1. A. J. Manninen, M. M. Leivo, and J. P. Pekola, Appl. Phys. Lett. 70, 1885 (1997).
2. M. Nahum and J. M. Martinis, Appl. Phys. Lett. 63, 3075 (1993).
3. M. Nahum and J. M. Martinis, Appl. Phys. Lett. 66, 3203 (1995).
4. P. L. Richards, J. Appl. Phys. 76, 1 (1994), and references therein.
5. P. A. Fisher, J. N. Ullom, and M. Nahum, J. Low Temp. Phys. 101, 561 (1995).
6. M. M. Leivo, J. P. Pekola, and D. V. Averin, Appl. Phys. Lett. 68, 1996 (1996).
7. K. D. Irwin, G. C. Hilton, D. A. Wollman, and J. M. Martinis, Appl. Phys. Lett. 69, 1945 (1996).
8. M. Nahum, T. M. Eiles, and J. M. Martinis, Appl. Phys. Lett. 65, 3123 (1994).
9. Nitridized silicon wafers were fabricated at UC Berkeley.
10. htr is well above the superconducting gap, and no NIS cooling takes place in this regime.
11. W. Holmes (unpublished). This is from a measurement on an 0.85 μm thick membrane. This author, however, stresses the radiative nature of heat propagation in a membrane.
12. F. Pobell, Matter and Methods at Low Temperatures, 2nd ed. (Springer, Berlin, 1996).