Growth of CdS thin films by using MOCVD with a single-source precursor C 10H 20CdN 2S 4 or C 14H 28CdN 2S 4

Journal of the Korean Physical Society

Volumn 47, Issue 1, 2005, Pages 89-93

  Youn, Kwan Sik ^a   Yu, Kook Hyun ^a   Song, Jin Seob ^b   Choi, In Hwan ^b  

^a Dongguk University   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

CdS thin film; Diethyldithiocarbamate; Dipropy idithiocarbamate; LP MOCVD; Single organometallic precursor

Indexed keywords

EID: 23744498062     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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