Electrical isolation of MQW InGaAsP/InP structures by MeV iron ion implantation for vertical PIN modulators and photodiodes

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 362-365

  Kong, S F ^a   Pantouvaki, M ^a   Liu, C P ^a   Seeds, A J ^a   Too, P ^b   Ahmed, S ^b   Gwilliam, R ^b   Roberts, J S ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE STRUCTURE; ELECTRICAL ISOLATION; EPITAXIAL MATERIALS; MULTIPLE QUANTUM WELLS (MQW);

ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; ION IMPLANTATION; IRON; LEAKAGE CURRENTS; LIGHT MODULATORS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 23744454832     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2004.1442730     Document Type: Conference Paper

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