Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature

Institute of Physics Conference Series

Volumn 174, Issue , 2003, Pages 41-44

  Too, P ^a   Ahmed, S ^a   Sealy, B J ^a   Gwilliam, R ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FERMI LEVEL; HALL EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS; ION BOMBARDMENT; IRON; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; TEMPERATURE CONTROL; THERMODYNAMIC STABILITY;

ANNEALING TEMPERATURE; SHEET RESISTANCE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE); THERMAL ANNEALING FURNACES;

ION IMPLANTATION;

EID: 10444289820     PISSN: 09513248     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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