Application of N2/Ar inductively coupled plasma to the photoresist ashing for low-k dielectrics

Journal of Materials Science

Volumn 40, Issue 13, 2005, Pages 3543-3544

  Kim, Hyoun Woo ^a   Myung, Ju Hyun ^a   Kim, Nam Ho ^a   Yoo, Chung Gon ^b   Suh, Kee Won ^b   Kim, Sung Kyeong ^b   Choi, Dae Kyu ^b   Chung, Chin Wook ^c   Kang, Chang Jin ^d   Park, Wan Jae ^d   Park, Se Geun ^a   Lee, Jae Gab ^e  

^a Inha University   (South Korea)

^b New Power Plasma Co Ltd   (South Korea)

^c Hanyang University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

^e Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ETCHING; HYDROGEN BONDS; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; MAGNETIC FIELDS; PERMITTIVITY; PHOTORESISTS; PLASMA DENSITY; SOLUTIONS;

ETCHING RATE; GAS FLOW RATIO; LOW-K MATERIALS; PHOTORESIST ASHING;

NITROGEN;

EID: 23744442916     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10853-005-2877-8     Document Type: Article

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